Скачать полную версию статьи (в PDF формате)

F. O. Ivashchyshyn, I. I. Grygorchak, and M. I. Klapchuk
«F. O. Ivashchyshyn, I. I. Grygorchak, and M. I. Klapchuk»
403–414 (2015)

PACS numbers: 71.20.Tx, 77.84.-s, 81.07.Pr, 81.16.Fg, 82.75.-z, 84.32.Tt, 84.37.+q

Intercalated nanostructures of InSe?htd? and GaSe?htd? are fabricated. Phenomena of the negative photocapacitance and the quantum capacitance are visualized for the first nanostructure. The introduction of histidine between indium selenide layers leads to increasing of conductivity anisotropy (?||/??) from 67 to 226. Temperature dependences of a real component of the complex impedance indicate semiconductor mechanism of conductivity along nanolayers with two activation energies of 1.6 meV in low-temperature region and of 0.25 meV in high-temperature one. An appearance of the giant high-frequency negative magnetoresistance and almost 20-fold photosensibility increasing are observed for the second nanostructure. The conductivity anisotropy (?||/??) of the nanostructure GaSe?htd? is 102. Temperature dependence of a real component of the complex impedance along the layers within the temperature regions ?30?C???t???10?C, 10?C???t???30?C, 30?C???t???50?C demonstrates cardinally different mechanisms of conductivity. Activation energies are 0.35 in low-temperature interval and 0.69 in high-temperature one. Non-activated conductivity mechanism is observed in the range of temperature 10?C???t???30?C. The parameters of the energy spectrum calculated by means of the Geballe–Pollak theory prior to and after the introduction of histidine into both nanostructures are given. It well correlates with experimental data.