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2015

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( PDF )

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« SiCN-»
059–074 (2015)

PACS numbers: 61.43.Dq, 62.20.de, 62.20.Qp, 68.55.J-, 68.60.-p, 78.30.Ly, 81.15.Gh

The results for SiCN films deposited by a plasma-chemical method using hexamethyldisilazane as a main precursor are reported. The influence of discharge power, an amount of added nitrogen, substrate bias, substrate temperature, and annealing on film properties is investigated. As revealed, nanohardness (H) and Youngs module (E) are the most sensitive to substrate temperature and substrate bias. An increase of most deposition parameters leads to increasing both H and E due to an enhancement of the SiC and SiN bonds. On the contrary, H and E decrease with increasing discharge power mostly because of formation of SiO bonds. The deposited films are amorphous, and their surface roughness is comparable to the surface roughness of silicon substrates. Annealing in vacuum does not affect significantly on the structure, surface morphology, and values of H and E.

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