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В. В. Вайнберг, А. С. Пилипчук, В. Н. Порошин
«Особенности магнитотранспорта в гетероструктурах с селективно легированными квантовыми ямами»
019–028 (2014)

PACS numbers: 72.20.Fr, 72.80.Ey, 73.21.Fg, 73.50.Dn, 73.63.Hs, 75.47.Pq, 81.07.St

The field dependence of the low-temperature (T???4.2 K) lateral magnetoresistance of quantum wells with selective doping in the wells is studied. The concentration of impurities within the quantum wells is changed in the range of (1–7)?1011 cm?2. The analysis of experimental results within the scope of the available theories of weak localization is carried out. A good agreement between theory and experiment at a sufficiently high concentration of impurities is obtained. The reasons for the disagreement at low concentrations are discussed.