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И. Е. Марончук, Т. Ф. Кулюткина, И. И. Марончук, С. Ю. Быковский
«Жидкофазная эпитаксия и свойствананогетероструктур на основе соединений III–V»
077–088 (2012)

PACS numbers: 68.37.Ps, 68.65.Hb, 78.55.Cr, 78.67.Hc, 81.07.Ta, 81.15.Lm, 84.60.Jt

The authors describe the fabrication of nanoheterostructures with quantum dots during the liquid-phase epitaxy by means of the method of pulse cooling and heating of a substrate. The ex-perimental results for heterostructures grown on the base of GaAs and GaP with Ge, InAs, GaInAs, GeSi, Yb quantum dots and their parameters obtained using the atomic force microscopy and by the method of photoluminescence-spectra analysis are presented.