Скачать полную версию статьи (в PDF формате)

А. О. Дружинін, С. І. Нічкало, Ю. Р. Когут, А. М. Вуйцик
«Аналіза кінетики росту нановіскерів кремнію»
933–940 (2011)

PACS numbers: 61.46.Hk, 68.37.Ps, 68.65.La, 68.70.+w, 81.07.Gf, 81.15.Gh, 85.40.Sz

The results of experimental studies of silicon nanowires (NW) growth by the chemical vapour deposition (CVD) method in the opened and closed bromide systems according to ‘vapour–liquid–solid’ (VLS) mechanism are presented. As a result of experiment, the Si NW with average diameter of ??100 nm are grown. As shown, a cross section of the Si NW is directly pro-portional to thickness of preliminary-deposited gold film.