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2011

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том 9 / 

выпуск 4

 



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А. А. Дружинин, И. П. Островский, Ю. Н. Ховерко, С. И. Ничкало
«Получение кремниевых нитевидных нанокристаллов»
925–932 (2011)

PACS numbers: 61.46.Hk, 68.37.Ps, 68.65.La, 68.70.+w, 81.07.Gf, 81.15.Gh, 85.40.Sz

The results of experimental studies of silicon nanowires (NW) grown by the chemical vapour deposition (CVD) method in open system according to ‘vapour–liquid–solid’ (VLS) mechanism are presented. As a result of experiment, the Si NW with an average diameter of ??100 nm are grown. Based on kinetic experiment, a mathematical simulation of the axial and radial silicon NW growth is performed. In addition, the following kinetic param-eters are determined: effective supersaturation in a gas phase, kinetic crystallization coefficient, and cut-off diam-eter. As shown, the 50–70 nm diameter crystals grow according to the VLS mechanism, while the larger-diameter crystals grow according to two mechanisms, VLS and VS, that causes formation of more pronounced heterostructures with inner core and outer porous shell.

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