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Г. Г. Горох, Д. В. Соловей, В. А. Лабунов, В. И. Осинский*, Д. О. Мазунов*
«Эпитаксиальные наноструктуры InGaN, выращенные в порах анодного оксида алюминия на Si »
913–923 (2011)

PACS numbers: 68.37.Hk, 68.55.J-, 78.60.Hk, 78.66.Fd, 78.67.Rb, 81.05.Rm, 81.40.Tv

Processes of self-organizing of porous anodic alumina on n-type Si substrates are investigated. A method for formation of regular highly ordered alumina films with open pores on semi-conductor substrates is developed. Processes of selective hy-dride gas-phase epitaxial growth of InGaN semiconductor nanostructures in the pores of the alumina modified matrixes are studied. Optical and electrophysical properties of InGaN nanosystems and corresponding correlation of technological regimes are investigated. Self-organized InGaN nanostructures localized in anodic alumina pores have nonpolar ?-crystallographic orientation. Cathodoluminescence of fabri-cated structures and their spectral characteristics are in-vestigated and analysed