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О. В. Вакуленко, С. Л. Головинський, С. В. Кондратенко
«Глибокі рівні прилипання у гетероструктурах In0,4Ga0,6As/GaAs з квантовими точками.»
343–353 (2011)

PACS numbers: 72.20.Jv, 72.40.+w, 73.21.La, 73.50.Pz, 78.55.Cr, 78.67.Hc, 79.10.Ca

Properties of the lateral photocurrent, which is caused by optical recharging of centres of electron localization in In0.4Ga0.6As/GaAs heterostructures with quantum-dot chains, are investigated. Long-term dynamics of increasing and relaxation of photocurrent as well as effect of residual conductivity after exciting-radiation turning-off are revealed in photocurrent kinetics. Deep trap levels for electrons are found. They considerably affect to charge-carrier transport and recombination. Effect of the thermally stimulated conductivity is discovered by temperature measurements. The trap-level depth of 0.17 eV with reference to GaAs conductivity band is obtained from analysis of the shape of thermally stimulated current curve.