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Д. А. Фокин, С. И. Божко, V. Dubost*, F. Debontridder*, А. М. Ионов, T. Cren*, D. Roditchev*
«Электронный рост нанообъектов Pb на поверхностях Si.»
333–341 (2011)

PACS numbers: 61.05.jh, 68.35.Dv, 68.37.Ef, 68.55.ag, 68.65.Fg, 81.07.St, 82.80.Pv

We report on Pb-islands growth on a surface of silicon. Using the scanning tunnelling microscopy, we show that, while in general the growth follows the Stranski–Krastanov scenario, the formation of Pb islands is accompanied by their lamination with a characteristic scale of two nanometers (7 monolayers of Pb). Such an effect manifests the energy minimum in quantum wells due to the quantum confinement, and it can be explained within the scope of the electronic-growth model.