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Л. Г. Ильченко, В. В. Ильченко*, В. В. Лобанов
«Влияние атомной структуры поверхности металла на потенциальный рельеф близкорасположенной поверхности полупроводника.»
313–324 (2011)

PACS numbers: 73.30.+y, 77.22.Ch, 79.70.+q, 85.30.De, 85.30.Hi, 85.30.Tv

Within the scope of the dielectric formalism for three media with spatial dispersion, structural potential in a semiconduc-tor–vacuum–metal system, , is calculated. This potential is caused by atomic (microscopic) structure of each surface. Interconnection between semiconductor and metal, which is caused by shielding of surface-bound charge of semiconductor by free electrons of closely located metal and enhanced by formation of potential barrier in a vacuum gap at L???10 nm, increases substantially with the decrease of its thickness, L???0.1 nm. As shown, the calculated structural potential, , which is a superposition of contributions of microscopic structures of each of two surfaces, is asymmetric and causes not only local change of the height of potential barrier in the vacuum gap, but also a lateral change of total potential, , on the surface of semiconductor and in its near-surface area.

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