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М. Батаев, Ю. Батаев*, Л. Бриллсон*
«Влияние протонного облучения на AlGaN/GaN транзи-сторы c высокой подвижностью электронов.»
085–092 (2011)

PACS numbers: 72.80.Ey, 73.40.-c, 73.50.Fq, 73.61.-r, 73.63.Rt, 81.40.Wx, 85.30.-z

High electron mobility transistor (HEMT) degradation under 1.8 MeV proton irradiation has been studied up to the proton fluence of 3?1015 cm?2. High electron mobility AlGaN/AlN/GaN structures demonstrate higher electron mobility compared to AlGaN/GaN ones, and possess higher radiation hardness that show no degradation for transistors parameters to the level of proton irradiation density of 1014 cm?2. Measured HEMT transis-tors parameters suggest decrease in transconductance of I–V curves, increase in threshold current, and decrease in satura-tion current. The main reasons for HEMT parameters degradation under irradiation are decrease in carrier mobility due to scattering mechanisms at the layer interface and decrease in carrier concentration due to carrier removal to the deeper levels from conduction band.