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Л. Г. Ильченко, В. В. Ильченко*, В. В. Лобанов
«О формировании выпрямляющего контакта в системе полупроводник–вакуум–металл.»
055–065 (2011)

PACS numbers: 73.23.Hk, 73.30.+y, 73.40.Qv, 73.63.Rt, 81.07.Lk, 85.30.-z, 85.35.-p

Within the scope of the dielectric formalism for three me-dia with spatial dispersion, the total electrostatic poten-tial, Vi(x), in the semiconductor–vacuum–metal (SVM) system is calculated and takes into account the charge state of the semiconductor and metal surfaces before contact. As shown, the continuity of the potential when join-ing the SVM system can be maintained under the condition of formation of the electrical double layer (EDL) and redis-tribution of charge densities on interfaces in accordance with the contact potential difference, ??, and DES thick-ness, L. Independence of the distribution of charge poten-tial within the semiconductor on L during formation of the rectifying contact determines the stability of the height of a barrier layer over the whole plane of the contact, while the potential barrier within the vacuum slot in-creases with L according to the distribution of the image forces potential, within the slot.