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A. P. SHPAK, R. I. BIGUN, Z. V. STASYUK, Yu. A. KUNITSKY
«Structure and Electroconductivity of Ultrathin Films of Copper, Gold, and Silver »
339–388 (2010)
PACS numbers: 68.35.Ct, 68.37.-d, 68.55.J-, 72.10.Fk, 73.23.Ad, 73.25.+i, 73.50.Bk
The resistivity ? and the temperature coefficient of resistivity ? dependences on thin films thickness are investigated experimentally. The experiment showed that ? and ? possess size dependence. The experimental results for ? are interpreted within the scope of the inhomogeneous cross-section polycrystalline-film model size-effect theories. The grain-boundary scattering is explained within the framework of the Mayadas–Shatzkes and Tellier–Tosser–Pichard theories. The electron-transport parameters for thin films are calculated within the scope of the classical size effect. As shown, a value of the coefficient of charge-carrier grain-boundary transmission, t, do not depend on temperature in the range from 78 K to 370 K and surfactants under layers. The average amplitude of one-dimensional surface asperities, h, is estimated by means of the results of electrical measurements and shows good correlation with crystallite-size (D) data. The Sb, Ge or Si surfactant sublayers (of massive thickness less than 6 nm) hasten the Cu, Au and Ag films metallization. The calculations of electronic band structure of Cu, Au and Ag films show that films with thickness more than 5–6 atom layers have the same electronic band structure as bulk metal samples. The experimental results are explained within the framework of the classical and quantum size-effect theories. Generalized conclusion about electron transport in thin metal films for a wide thickness range is made. The ballistic electron transport in ultrathin metal films is explained within the scope of the Fishman–Calecki theory.
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