Скачать полную версию статьи (в PDF формате)

V. I. IVASHCHENKO, O. K. PORADA, L. A. IVASHCHENKO, S. N. DUB, I. I. TIMOFEEVA, and L. A. GRISHNOVA
«Impact of Substrate Bias on Structural and Mechanical Properties of a-SiC:H Films »
277–285 (2010)

PACS numbers: 62.20.Qp, 68.37.Ps, 71.15.Pd, 78.66.Jg, 81.15.Gh, 81.40.Pq, 82.80.Pv

Plasma-enhanced chemical vapour deposition technique is used to prepare amorphous silicon carbide films to examine an effect of substrate negative bias (UD) on film properties. The films are characterized by an atomic force microscopy, infrared absorption spectroscopy, X-ray diffraction, and Auger spectroscopy. The nanohardness, elastic modulus, and wear resistance of the films reach maximums for UD????200 V. To explain film-hardening mechanism, simulation of SiC films deposition on silicon substrates is carried out. Both experimental and theoretical investigations point out that the observed enhancement of the mechanical characteristics is a consequence of an improvement of the amorphous structure, film compactness, and decrease of surface roughness caused by increasing of negative substrate bias.