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A. V. BORISOV, A. N. SHMYREVA, and N. V. MAKSIMCHUK
«Cerium Oxide Nanocrystalline Films for Bioluminescence Sensor Systems »
245–254 (2009)

PACS numbers: 68.37.Ps, 73.50.Pz, 81.05.Je, 81.07.Bc, 81.15.Ef, 85.60.Gz, 87.80.-y

For the purpose of creation of the high-sensitive photodetectors, the properties of nanocrystalline films of cerium oxide are studied, and the basic mechanism of their formation depending on the technological conditions of vacuum deposition by means of explosive evaporation and type of substrate are determined. Morphology of CeOх films surface is investigated using atomic-force microscopy technique, and electronic structure of films is studied with using the method of x-ray photoelectron spectroscopy. The x-ray diffraction peaks of Ce(III) and Ce(IV) are observed in photoelectronic spectrum. As shown, the films deposited on SiO2 substrate at 200?C and the films deposited on Si3N4 substrate at 200?C and 300?C exhibit the most photosensitivity within the spectral range of 380–450 nm. Minimal temperature-resistance coefficient, 0.36%/deg, at operating temperature is revealed in the films deposited on SiO2 substrate at 200?C.