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G. I. KLETO, Ya. V. MARTYNYUK, A. I. SAVCHUK, V. N. STREBEZHEV, and Yu. K. OBEDZINSKIY
«Nanosize Ferroelectric Films for Integrated Memory Elements»
065–071 (2009)

PACS numbers: 68.55.J-, 77.84.Dy, 81.05.Je, 81.15.Cd, 82.45.Fk, 85.40.Sz, 85.50.Gk

Lead zirconate–titanate ferroelectric films (PZT) of 100–120 nanometres in thickness are fabricated by RF cathode sputtering of PZT-19 piezoelectric ceramics on the standard silicon plates preliminary covered with conductive layers of SnO2 and Y0.5Sr0.5CoO3. Influence of an electrode sublayer on structure of vacuum condensate is studied using scanning electron microscopy. The form of dielectric hysteresis loops testifies to presence of mechanical stresses in samples with SnO2. As shown, the number of cycles of switching of electric polarization on test samples in the form of capacitors increases in structures with Y0.5Sr0.5CoO3 oxide electrode. It can be explained by the decrease of mechanical stress on the electrode–film boundary.