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Ya. G. BELICHENKO, V. G. BELYKH, V. N. TULUPENKO, and V. N. POROSHIN
«Semi-Analytical Method for Self-Consistent Calculation of Structure with Single Quantum Well»
001–010 (2009)

PACS numbers: 68.65.Fg, 71.15.Dx, 71.15.Nc, 73.20.At, 73.21.Fg, 81.07.St

In this work, a semi-analytical self-consistent method of calculation for semiconductor heterostructure, which consists of a single quantum well with uniformly doped barriers, is proposed. Used approximations permit the substitution of numerical solution of Poisson equation by an analytical one. This approach made possible an obtaining of fast convergence of the calculation procedure. Suggested method allows obtaining energy-band profile, size-quantization energy levels, Fermi level position, concentration of carriers in quantum well, and length of depletion-charge layer in barriers.