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V. V. FILIPPOV
«Modelling of Electronic Structure of Silicon Strained Nanoparticles»
705–715 (2008)

PACS numbers: 61.46.Bc, 61.46.Hk, 73.22.Dj, 73.61.Cw, 81.07.Bc

Results of optimization of atomic structure and calculation of electronic properties of strained silicon clusters Si51 on a germanium substrate are presented. Interaction of boundary atoms of nanoclusters with the substrate and mechanism of charge transfer in silicon nanostructures are studied. Influence of strain and impurities on distribution of electronic states is analyzed.