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R. I. BIGUN and Z. V. STASYUK The structure and electrical conductivity of nanometre thin films of Cu deposited on polished glass surface and glass surface predeposited with germanium sublayer are investigated. As shown, Ge sublayers (with massive thickness of 1—5 nm) hasten Cu-films’ metallization and promote formation of more fine-grained Cu films. Size dependences of resistivity and resistance temperature coefficient are explained within the scope of the classical and internal size-effect models. |
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