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N. T. POKLADOK, I. I GRIGORCHAK, D. I. POPOVYCH, Ya. M. BUZHUK, and I. M. BUDZULYAK
«Giant Magnetoresistance Effect in Semiconductors with Magnetoactive Nanointerlayers»
009–016 (2008)

PACS numbers: 71.20.Nr, 72.80.Ey, 73.40.Vz, 73.43.Qt, 73.50.Jt, 75.30.Vn, 75.70.Pa

By the method of the laser-stimulated intercalation, gallium-selenide single crystals with interstitial manganese are obtained. As shown, in such structures, the giant magnetoresistance is realized. Its magnitude and sign depend on the concentration of the introduced ‘guest’ component. According to the proposed model, the effect is concerned with the change of topology of intercalate states in the vicinity of Fermi level caused by the magnetic field.