Collection of scientific works Nanosystems, nanomaterials, nanotechnologies
Year 2026 Volume 24, Issue 1
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M. AL-HADIDI1, Z. B. IBRAHEEM2, Rana Z. A. AL-FAYIH1, 2, and M. M. UONIS1

1College of Science, Department of New and Renewable Energy, Mosul University, Mosul, Iraq
2College of Science, Department of Physics, Mosul University, Mosul, Iraq

Solar-Cell Properties of Porous Silicon/Cadmium Telluride Junction

97–103 (2026)

PACS numbers: 42.70.Qs, 72.40.+w, 78.40.Fy, 78.67.-n, 84.60.Jt, 88.40.hj

Received 7 September, 2024; in revised form, 8 October, 2024

PSi-CdTe junction is prepared using spray pyrolysis and photoelectrochemical etching methods; the deposition method of thin CdTe films is performed at 90°C; thin CdTe films are completely crystalline with energy gap of 2.4 eV. The grain sizes are investigated using SEM and x-ray spectroscopy; both measurement techniques show that the grain sizes are within the nanoscale. The junction show I-V characteristics similar to the diode in both forward and reverse bias; the junction also show solar-cell characteristics with fill factor of 0.594.

KEY WORDS: porous silicon, cadmium telluride, thin films, semiconductors, optical properties of semiconducting thin films, diode characteristics, solar-cell characteristics

DOI: https://doi.org/10.15407/nnn.24.01.0097

Citation:
M. Al-Hadidi, Z. B. Ibraheem, Rana Z. A. Al-fayih, and M. M. Uonis, Solar-Cell Properties of Porous Silicon/Cadmium Telluride Junction, Nanosistemi, Nanomateriali, Nanotehnologii, 24, No. 1: 97–103 (2026); https://doi.org/10.15407/nnn.24.01.0097
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