Collection of scientific works Nanosystems, nanomaterials, nanotechnologies
Year 2025 Volume 23, Issue 3
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Arshad Fadhil KADHIM1, Ghaith AHMED2, and Ahmed HASHIM3

1The General Directorate for Education in Al-Najaf Al-Ashraf, Al-Najaf Al-Ashraf, Iraq
2Hilla University College, Department of Anesthesia Techniques, Hilla, Iraq
3College of Education for Pure Sciences, Department of Physics, University of Babylon, Hilla, Iraq

Fabrication of PS–SiO2–Si3N4 Nanocomposites and Tailored Dielectric Features for Promising Optoelectronic Applications

859–866 (2025)

PACS numbers: 72.80.Tm, 77.22.Ch, 77.22.Gm, 78.20.Ci, 81.07.Pr, 81.40.Tv, 82.35.Np

Received 10 March, 2024

This article aims to fabricate the silica (SiO2)/silicon nitride (Si3N4) nanoparticles'-doped polystyrene (PS) for utilize in a variety of electronics and electrical nanodevices. By casting method, the films of PS–SiO2–Si3N4 are synthesized at various weight percentages of 2.3%, 4.6%, 6.9% of SiO2–Si3N4. The distribution of SiO2–Si3N4 nanoparticles (NPs) are examined by optical microscopy (OM). The OM confirms a good distribution of SiO2/Si3N4 NPs inside the matrix of polystyrene. The dielectric characteristics are evaluated at room temperature across a frequency range of 100–5×106 Hz. The results reveal that the dielectric constant and dielectric loss of PS–SiO2–Si3N4 nanocomposites are reduced as the frequency of the applied electric field is increased. The electrical conductivity of alternating current rises with rising frequency. With increasing concentration of SiO2–Si3N4 nanoparticles, the dielectric constant, dielectric loss, and A.C. electrical conductivity of PS–SiO2–Si3N4 nanocomposites are enhanced. The results confirm that the dielectric properties of the PS–SiO2–Si3N4 nanostructures might be used in a variety of nanoelectronics and electrical applications.

KEY WORDS: polystyrene (PS), silica (SiO2), silicon nitride (Si3N4), dielectric constant, dielectric loss, conductivity, electrical nanodevices

DOI: https://doi.org/10.15407/nnn.23.03.0859

Citation:
Arshad Fadhil Kadhim, Ghaith Ahmed, and Ahmed Hashim, Fabrication of PS–SiO2–Si3N4 Nanocomposites and Tailored Dielectric Features for Promising Optoelectronic Applications, Nanosistemi, Nanomateriali, Nanotehnologii, 23, No. 3: 859–866 (2025); https://doi.org/10.15407/nnn.23.03.0859
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