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Ф. Ф. Комаров, Л. А. Власукова, О. В. Мильчанин, А. Ф. Комаров, А. В. Мудрый*, Б. С. Дунец
«Ионный синтез нанокристаллов узкозонных полупроводников А3В5 в кремниевой матрице для систем оптоэлектроники.»
355–363 (2011)

PACS numbers: 61.72.uj, 68.37.Lp, 78.30.Fs, 78.55.Cr, 79.20.Rf, 81.07.Bc, 81.40.Wx

The influence of ion implantation and post-implantation an-nealing behaviours on the structural and optical properties of silicon matrix with ion-beam synthesized InAs and GaSb nanocrystals is studied. As demonstrated, by introducing get-ter, varying the ion-implantation temperature, ion fluence, and post-implantation annealing duration and temperature, it is possible to form InAs and GaSb nanocrystals in the range of sizes of 2–80 nm and create various concentrations and distri-butions of secondary defects. The last factor causes the ap-pearance of dislocation luminescence lines, D1, D2 and D4, at 0.807, 0.87 and 0.997 eV, respectively.