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A. O. KOVALCHUK and A. M. GUSAK
«Reactions in Nanowires at the Point Contact in MetalSilicon System»
1163–1175 (2009)

PACS numbers: 61.46.Km, 64.70.Nd, 64.75.Jk, 65.80.-g, 66.30.Pa, 68.35.Md, 82.60.Qr

The paper provides theoretical analysis of reactions between the metal and Si in nanowires observed during experiments held in University of California (Los Angeles), Tsin Khua University (Taiwan) and published in the Nano Letters journal recently. The experiments showed that, in the case of point contact of metal nanowires (for example, Ni or Co nanowires) and pure Si, the reaction with formation of the corresponding metal silicide always start from the end of Si wire, which is opposite to the contact. Using experimental data and available thermodynamic and kinetic parameters for Ni as a base, the analytical calculation model is developed. As revealed, the cause for nucleation at the tip may be stipulated by noticeable difference between the total surface curvatures at a tip of the nanowire and at its other sites. This is the feature of nanosystems, which can be caused by two main factors: a short time of diffusion relaxation (the homogenization time) and sharp dependence of surface curvature on its shape.

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